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2N5322 2N5323
SMALL SIGNAL PNP TRANSISTORS
s
s s
SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321
DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5322 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 o C Total Dissipation at T c = 25 o C Storage and Junction Temperature -100 -100 -75 -6 -1.2 -2 -1 1 10 -65 to 200 Value 2N5323 -75 -75 -50 -5 V V V V A A A W W
o
Unit
C
June 1997
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2N5322/2N5323
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = -80 V V CB = -60 V V EB = -5 V V EB = -4 V I C = -100 A for 2N5322 for 2N5323 I C = -10 mA for 2N5322 for 2N5323 I E = -100 A for 2N5322 for 2N5323 I C = -500 mA for 2N5322 for 2N5323 I C = -500 mA for 2N5322 for 2N5323 for 2N5322 I C = -500 mA I C = -1 A for 2N5323 I C = -500 mA I C = -500 mA I B1 = -50 mA I B = -50 mA -0.7 -1.2 V CE = -4 V -1.1 -1.4 V CE = -4 V V CE = -2 V V CE = -4 V f = 10 MHz V CC = -30 V 30 10 40 50 100 1000 130 V V V V for 2N5322 for 2N5323 for 2N5322 for 2N5323 -100 -75 -75 -50 -6 -5 -0.1 -0.5 Min. Typ. Max. -0.5 -5 Unit A A A A V V V V V V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Voltage
V CE(sat)
V BE
h FE
DC Current Gain
250 MHz ns ns
fT t on t off
Transition Frequency Turn-on Time Turn-off Time
I C = -50 mA V CE = -4 V
I C = -500 mA V CC = -30 V I B1 = -IB2 = -50 mA
Pulsed: Pulse duration = 300 s, duty cycle = 1 %
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2N5322/2N5323
TO-39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
G I H
D
A
L
F
E
B
P008B
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2N5322/2N5323
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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